In-Plane Magnetolumnescence of Modulation-Doped GaAs/AlGaAs Coupled Double Quantum Wells

摘要

In-plane magnetic field photoluminescence spectra from a series ofGaAs/AlGaAs coupled double quantum wells show distinctive doublet structuresrelated to the symmetric and antisymmetric states. The magnetic field behaviorof the upper transition from the antisymmetric state strongly depends on samplemobility. In lower mobility samples, the transition energy shows an $\calN$-type kink with fields (namely a maximum followed by a minimum), whereashigher mobility samples have a linear dependence. The former is due to ahomogeneous broadening of electron and hole states and the results are in goodagreement with theoretical calculations.